专著/章节：
[1]Lining Zhangand Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016
[2]Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.
代表性期刊文章：
[1] Z. Wang, Y. Lv,L. Zhang, L. Liao, C. Jiang, “Strain release enabled bandgap scaling in Ge nanowire and tunnel FET application,”IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4725-4729, Aug. 2022
[2] Z. Ma, C. Estrada, K. Gong,L. Zhang*, M. Chan, “On-chip integrated high gain complementary MoS2 inverter circuit with exceptional high hole current p-channel field-effect transistors,”Adv. Elec. Mater., doi.org/10.1002/aelm.202200480, July 2022
[3] Y. Jiao, X. Huang, Z. Rong, Z. Ji, R. Wang,L. Zhang*,“Modeling multigate negative capacitance transistors with self-heating effects,”IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3029-3036, June. 2022
[4]N. Feng, H. Li, C. Su,L.Zhang*, Q. Huang, R. Wang, R. Huang, “A dynamic compact model for ferroelectric capacitance,”IEEE Electron Device Letters, vol. 43, no. 2, pp. 390-393, Mar. 2022
[5] F. Ding, B. Peng, X. Li,L. Zhang*, R. Wang, Z. Song, R. Huang, “A review of compact modeling for phase change memory,”J. of Semi., vol. 43, no. 2, pp. 023101, Feb. 2022
[6] F. Ding, D. Dong, Y. Chen, X. Lin,L. Zhang*, “Robust simulations of nanoscale phase change memory: dynamics and retention,”Nanomaterials, vol. 11, no. 11, pp. 2945, Nov. 2021
[7] B. Liu, X. Huang, Y. Jiao, N. Feng, X. Chen, Z. Rong, X. Lin,L. Zhang*, X. Cui, “Channel doping effects in negative capacitance field-effect transistors,”Solid-State Electronics, vol. 186, pp. 108181, Dec. 2021
[8] X. Chen, F. Ding, X. Huang, X. Lin, R. Wang, M. Chan,L. Zhang*, R. Huang, “A robust and efficient compact model for phase change memory circuit simulations,”IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4404-4410, Sept. 2021
[9] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang,Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,”IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021
[10] Z. Huang, S. Xiong, N. Dong,Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,”IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021
[11] Z. Ma,Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,”IEEE Electron Device Letters, vol. 42, no. 3, pp. 343-346, Mar. 2021
[13] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin,Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,”IEEE Access, vol. 8, pp.95278-95287, May 2020
[14] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li,Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,”IEEE Electron Device Letters, vol.41, no.5, pp. 741-744, May 2020
[15] Z. Ahmed, Q. Shi, Z. Ma,Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,”IEEE Electron Device Letters, vol. 41, no. 1, pp. 171-174, Jan. 2020
[16] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin,Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,”IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020
[17]Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019
[18]Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019
代表性会议文章：
[1] Qing Shi,Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
[2]Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA
[3] F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, M. Chan,L. Zhang*, R. Huang, “Compact modeling of phase change memory with parameter extractions,” accepted byESSDERC2022
[4] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang,L. Zhang*, R. Huang, “A dynamic current hysteresis model for thin-film transistors,” accepted bySISPAD2022
[3] H. Hu,Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]
[4] D. Song,Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]
[5] P. Wu, C. Ma,Lining Zhang, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA
